In this paper, the loss of silicon carbide (SiC) MOSFETs based electric vehicle (EV) traction systems are investigated comprehensively. The loss of SiC MOSFETs are analyzed and modeled based on the commutation process in the inverter. The analysis model includes parasitic inductance, parasitic capacitance nonlinearity, transconductance nonlinearity, body diode reverse recovery, and parasitic capacitance charging and discharging. The simulation results confirm the losses models of SiC MOSFETs.
Keywords SiC MOSFETs, Electric vehicle traction systems, Losses